Эпитаксиальный рост пленок 3C-SiC на подложках сапфира (0001) и кремния (111) методом металлоорганического парового химического осаждения

Р.Е. Бейсенов; З.А. Мансуров; С.Ж. Токмолдин; А. Игнатьев

doi:10.18321/

Authors

R. Beisenov Al-Farabi Kazakh National University, Almaty, Kazakhstan; Center for Advanced Materials, University of Houston, Houston, Texas, USA
Z.A. Mansurov Al-Farabi Kazakh National University, Almaty, Kazakhstan; Institute оf Combustion Problems, Almaty, Kazakhstan
S.Zh. Tokmoldin Institute for Physics and Technology, Almaty, Kazakhstan
A. Ignatiev Center for Advanced Materials, University of Houston, Houston, Texas, USA

DOI:

https://doi.org/10.18321/

Keywords:

epitaxial films, silicon, sapphire, deposition, carbon

Abstract

In this paper were obtained epitaxial films of cubic polytype 3C-SiC on Si 111 and sapphire 0001 substrates by metal organic chemical vapor deposition (MOCVD), at temperatures of 850 °C and 900 °C. As a single source of Si and C were used metal organic precursor diethylmethylsilane (DEMS) without any carrier gas. Structural and elemental analysis of SiC films were investigated by XRD and Auger spectroscopy. Morphol-ogy and thickness of SiC films investigated by scanning electron and atomic force microscopes. XRD analy-sis shows that the use of a precursor diethylmethylsilane gives crystalline films of silicon carbide at tempera-ture 850 °C. Was also established that at temperatures of 850 °C and 900 °C films have a cubic structure of the 3C-SiC polytype with orientation 111 on both substrates. Morphology of grown films shows that the films have a smooth surface and higher crystalline order on sapphire than on silicon substrate. Thickness of the films was measured by cross-sectional scanning electron microscope and shows more than 6 micron thick layer at deposition time of 2 hours. Average growth rate was 40 nm / min. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to III-nitrides LED and UV photodetector fabrication and also for gas detector application.

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