Atoms recombination kinetics on silicon in chlorine plasma

Authors

  • D.V. Sitanov Ivanovo State University of chemistry and technology, Sheremetevskii ave. 7, 153000, Ivanovo
  • V.V. Kashin Ivanovo State University of chemistry and technology, Sheremetevskii ave. 7, 153000, Ivanovo

DOI:

https://doi.org/10.18321/

Keywords:

plasma, silicon, recombination, steady state

Abstract

In this work, the recombination rate coefficients (probabilities) for chlorine atoms on silicon in Cl2 plasma were obtained with the use of relaxation-pulse metod (RPM). The factors influencing the measurements error were analyzed. The time gaps corresponding to the stable surface were determined.

References

(1). Кириллов Ю.В., Ситанов Д.В. Исследование процессов в высокоэнергетических установках // Химическая физика и электроника. 2004. Т. 38. № 3. С. 234–238.

(2). Ефремов А.М., Светцов В.И., Ситанов Д.В. Физические процессы в плазменных системах // Теплофизика высоких температур. 2008. Т. 46. № 1. С. 1–5.

(3). Macko P., Veis P., Cernogora G. Diagnostics of low-temperature plasma // Plasma Sources Science and Technology. 2004. Vol. 13. P. 251–257.

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Published

2014-09-19

Issue

Vol. 12 No. 3 (2014): COMBUSTION AND PLASMA CHEMISTRY

Section

Статьи

License

Copyright (c) 2014 Д.В. Ситанов, В.В. Кашин

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Sitanov, D., & Kashin, V. (2014). Atoms recombination kinetics on silicon in chlorine plasma. Combustion and Plasma Chemistry, 12(3), 165-170. https://doi.org/10.18321/
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