Плазмостимулированное aтомно-слоевое осаждение в технологиях создания структур наноэлектроники

К.Ф. Руденко; А.А. Орликовский

doi:10.18321/

Authors

K.V. Rudenko Physical-technical Institute of the Russian Academy of Sciences, Nakhimovskiy ave. 34, 117218, Moscow
A.A. Orlikovsky Physical-technical Institute of the Russian Academy of Sciences, Nakhimovskiy ave. 34, 117218, Moscow

DOI:

https://doi.org/10.18321/

Keywords:

plasma, deposition, nano-electronics, structure, processes

Abstract

Development of plasma ALD technologies for applications in nanoelectronics is a consequence of the scaling of integrated IC devices to nanometer sizes. The discussion is performed concerning basic physical and chemical principles of ALD processes including stimulation of self-limited heterogeneous reactions in the chemisorbed monolayer of Iprecursor on the surface by plasma of II-precursor gas. The advantages and limitations of the ALD method in comparison with the conventional plasma-enhanced deposition (PECVD) from plasma volume are demonstrated. The analysis of features of the plasma reactors for ALD and in situ diagnostic methods for ALD-processes has been done. A review of existing PEALD technologies for growth of dielectric, semiconductor and metal layers applied in advanced nanoelectronic structures is presented.

References

(1). Алесковский В.Б. Остовная гипотеза и опыт синтеза катализаторов. Дис. … д-ра хим. наук. Л., 1952.

(2). Кольцов С.И., Алесковский В.Б. // Журнал физической химии. 1968. Т. 42. С. 1210–1215.

(3). Ritala M., Leskela M. // Nanotechnology. 1999. Vol. 10. P. 19–24.

(4). George S.M. // Chemical Reviews. 2010. Vol. 110. P. 111–131.

(5). Мяконьких А.В., Рогожин А.Е., Руденко К.В., Лукичев В.Ф., Орликовский А.А. // Труды 3-го Всероссийского семинара по проблемам химического осаждения из газовой фазы. Иркутск, 2013. С. 34–36.

(6). Knoops H.C.M., Mackus A.J.M., Donders M.E., et al. // ECS Transactions. 2008. Vol. 16. No. 4. P. 209–218.